In this paper, a general analysis of the fractional order operational transresistance amplifiers (OTRA) based oscillator is presented and validated through eight different circuits which represent two classifications according to the number of OTRAs. The general analytical formulas of the oscillation frequency, condition as well as the phase difference are illustrated for each case and summarized

This paper introduces a novel 2T2M memristor based memory cell which, offers higher stability and noise margins than previous works. The proposed 2T2M RRAM module is similar to conventional 6T SRAM module in terms of delay and number of interface pins. However, the predicted area of the proposed 2T2M RRAM cell is significantly lower compared to the CMOS based 6T SRAM cell, and is also expected to

This paper presents a generalized form of the fractional logistic map. Two general parameters a and b are added to the classical fractional logistic equation. The effect of such parameters on the map is studied explicitly, in combination with the fractional order parameter α, which offers an extra degree of freedom increasing the design flexibility and adding more controllability on the design

This paper presents the generalization of a delayed version of the logistic map. The effect of the added two general parameters is studied, which offers the option of having three different maps. The dynamic behavior of the vertical, zooming and the general map is analyzed. The study of the fixed points, stability ranges and bifurcation diagram of the delayed logistic map at hand is detailed in

We have fabricated 9.7% efficient Cu2ZnSnSe4/CdS/ZnO solar cells by H2Se selenization of sequentially sputtered metal layers. Despite the good efficiency obtained, process control appears to be difficult. In the present contribution we compare the electrical and physical properties of two devices with nominal same fabrication procedure, but 1% and 9.7% power conversion efficiency respectively. We

Abstract Pinched hysteresis is considered to be a signature of the existence of memristance. However, here we report on a model that exhibits pinched hysteresis yet it may represent a nonlinear inductor or a nonlinear capacitor (both with quadratic nonlinearity) or a derivative-controlled nonlinear resistor/transconductor. Further, the lobe area of the pinched hysteresis loop in these devices has

This paper presents a study of fractional order oscillators based on current feedback operational amplifiers (CFOA). Two general cases have been discussed for the oscillation frequency and condition with the use of two fractional order elements of different orders. Design procedure for the two general cases is illustrated with numerical discussions. Circuit simulations for some special cases are

This paper introduces two mathematical models of meminductor based on a simple symmetrical double-loop equation with their generic formulas and analysis. Moreover, new circuits based on CCII are developed for emulating the behavior of the current-controlled and voltage-controlled models. The proposed circuits are realized without using a memristor unlike the previous emulators. Finally, the

Recently, mem-elements have become fundamental in the circuit theory through promising potential applications based on the built-in memory-properties of these elements. In this paper, the mathematical analysis of the memcapacitor model is derived and the effect of different voltage excitation signals is studied for the linear dopant model. General closed form expressions and analyses are presented

This paper introduces two voltage-controlled memristor-based reactance-less oscillators with analytical and circuit simulations. Two different topologies which are R-M and M-R are discussed as a function of the reference voltage where the generalized formulas of the oscillation frequency and conditions for oscillation for each topology are derived. The effect of the reference voltage on the